A Study of Metal Gates on HfO_2 Using Si Nanowire Field Effect Transistors as Platform

摘要

In this work, we present an experimental study on the effect of metal gates/high-k dielectrics stacks on threshold voltage and carrier mobility in nanowire field effect transistors. The difference between effective mobility and field effect mobility of nanowire FETs has been first demonstrated. The interface states and effective work functions of the engaged metals can also be extracted by studying various metal gates.