A Detail Simulation Study on Extended Source Ultra-Thin Body Double-Gated Tunnel FET

摘要

This work presents an extensive simulation study on different design parameters of an Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor structure. The study investigates the effects of different device design parameter variations on electrical parameters like: sub-threshold swing, trans-conductance, ON-state current and OFF-state current. Finally an optimum structure for Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor has been derived from the simulation study, with encouraging results for parameters of interest.