A Probability Assessment Method for Degradation of Bridge Power MOSFET Circuit Based on Common Turn-on State

摘要

A performance degradation assessment method is proposed based on probability statistic of common turn-on state of power MOSFET circuit in this paper. Threshold shift transient characteristics of MOSFET are studied and the performance degradation behavior of a bridge power MOSFET circuit is simulated. Threshold voltage degradation of a power MOSFET circuit caused by half bridge arm is observed and the probability of a period transient common turn-on state is calculated to evaluate the degree. The result can be used to evaluate the performance degradation trend and can also provide data support for predicting the degradation degree before circuit failed.