首页> 外国专利> Reducing commutating noise in power MOSFET based circuit - using three half bridge circuits each having two pairs of MOSFET devices in parallel, and coupled by diodes, for three=phase inverter function

Reducing commutating noise in power MOSFET based circuit - using three half bridge circuits each having two pairs of MOSFET devices in parallel, and coupled by diodes, for three=phase inverter function

机译:降低基于功率MOSFET的电路中的换向噪声-使用三个半桥电路,每个半桥电路具有两对并联的MOSFET器件,并通过二极管耦合,用于三相逆变器功能

摘要

The method involves using a 3 phase pulse inverter circuit which has an intermediate rectified voltage (UD) input. The inverter unit is formed by 3 half bridges (A,B,C) and is used to supply an inductive load (6), e.g. motor or transformer. Each half bridge circuit is formed from pairs of MOSFET transistors (1,2,1',2') that have each pair formed as series arrangements that are in parallel with each other. Each half bridge circuit is coupled via diodes (3,4). Phase outputs (RST) are taken from the centre points. ADVANTAGE - Avoids commutation losses in pulsed MOSFET inverter circuitry.
机译:该方法涉及使用具有中间整流电压(UD)输入的三相脉冲逆变器电路。逆变器单元由3个半桥(A,B,C)组成,用于提供感应负载(6),例如马达或变压器。每个半桥电路由成对的MOSFET晶体管(1,2,1',2')构成,每对MOSFET晶体管(1,2,1',2')形成为彼此并联的串联布置。每个半桥电路通过二极管(3,4)耦合。相位输出(RST)从中心点获取。优势-避免脉冲MOSFET逆变器电路中的换向损耗。

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