Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

摘要

The effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n~+ and p~+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p~+ SPC poly-Si thin films. A very high Hall mobility of 71 cm~2/Vs for n~+ poly-Si and 35 cm~2/Vs for p~+ poly-Si at the carrier concentration of 2×10~(19) cm~(-3) and 4.5×10~(19) cm~(-3), respectively, were obtained.