Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films

摘要

Polycrystalline silicon (poly-Si) films thicker than 1.5 μm, consisting of dense small grains called nano-grain poly-Si (ngp-Si), are formed by flash lamp annealing (FLA) of amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) method. Crystallinity of the ngp-Si films can be controlled by changing lamp irradiance. Secondary ion mass spectroscopy (SIMS) profiles of dopants in the ngp-Si films after FLA shows no serious diffusion. A minority carrier lifetime of over 5 us is observed from these ngp-Si films after defect termination process using high pressure water vapor annealing (HPWVA), showing possibility of application for high-efficient thin film solar cells.