Si CMOS Contacts to III-V Materials for Monolithic Integration of III-V and Si Devices

摘要

Si CMOS-based contact metallurgies to III-V compounds will allow parallel interconnection of Si CMOS and III-V devices and promote monolithic integration. In this study, we report the use of nickel silicides to contact n++ GaAs encapsulated with n++ Si. The structure and electrical properties of contacts with varying reaction depths is correlated. Specific contact resistivities lower than 5e-7 ohm-cm~2 are measured on NiSi/Si/GaAs structures.