Synthesis and characterization of silicon nanorods via chemical vapor deposition at normal pressure

摘要

The silicon nanorods have been successfully synthesized via a chemical vapor deposition using an one-end sealed tube system at atmospheric pressure. The ice-bath silicon tetrachloride, high-pure H2, high-pure Ar and silicon <111>wafer were used as silicon source, reaction gas, carrier gas, and substrate, respectively. The effect of the reaction temperature, the holding time and the flow rate of the reaction gas and carrier gas on the silicon nanostructures has been investigated. The higher the reaction temperature, the longer the holding time and the higher the flow rate of the reaction gas, the more silicon nanorods grow. The silicon nanorods with the diameter range of 45 ~ 75 nm are crystalline. They grew along the [111] direction and followed a VLS mechanism.