Coating articles with oxygen barriers in a reaction chamber of a chemical vapor deposition device under normal pressure, comprises initially admixing undried air to gas stream of silicon and monocarbonic acid with a given steam pressure

摘要

The process for coating articles with oxygen barriers in a reaction chamber of a chemical vapor deposition (CVD) device at 300[deg] C under normal pressure, where the articles are made of graphite or materials combined with graphite and the oxygen barriers are made of quartz, comprises initially admixing undried air to a gas stream of silicon and monocarbonic acid with a steam pressure of larger than 2 Torr, and producing non-crystalline compounds made of silicon and monocarbonic acid by evaporating liquid and then guiding over a surface of the components over a predetermined time. The process for coating articles with oxygen barriers in a reaction chamber of a chemical vapor deposition (CVD) device at 300[deg] C under normal pressure, where the articles are made of graphite or materials combined with graphite and the oxygen barriers are made of quartz, comprises initially admixing undried air to a gas stream of silicon and monocarbonic acid with a steam pressure of larger than 2 Torr, producing non-crystalline compounds made of silicon and monocarbonic acid by evaporating liquid and then guiding over a surface of the components over a predetermined time, reacting the liquid neither with the compounds made of silicon and monocarbonic acid, still participates in the deposition of an oxygen-tight coating, and directly removing fat, organic ingredients and loose particles from or on the surface of the articles before beginning the coating. The monocarbonic acid is acetic acid, which forms gaseous silicon acetate in premixing with silicon. The articles are directly subjected to a plasma dry cleaning before beginning the coating.