Deposition of doped silicon contg. layers on semiconductor wafers - using low pressure CVD with addn. of oxygen contg. component into reaction gas stream to give uniform doping element rare deposition

摘要

Semiconductor devices are made by heating a number of wafers of semiconductor material in an oven tube, then depositing a doped Si-contg. layer on the wafers by passing a stream of reaction gas through the tube, the reaction gas comprising a carrier gas (I), a hydrogen-contg. Si cpd. (II) and a hydrogen cpd. of a doping element (III), whilst an extra gas (IV) is passed through the oven tube by introducing an oxygen-contg. component into the stream of reaction gas in an amt. such that the doping element is deposited at a rate which does not vary essentially in the direction of flow of the gas stream.