Ferroelectric domain patterns writing in PbZr_(0.3)Ti_(0.7)O_3 thin films using a biased sweeping PFM tip

摘要

(111) preferred orientated ferroelectric PbZr_(0.3)Ti_(0.7)O_3 (PZT) thin films with grain size of 300-500 nm, and root-mean-square (RMS) roughness of 2.927 nm were prepared by using radio frequency magnetron sputtering process. Piezoresponse force microscopy (PFM) has been used to write complex ferroelectric domain patterns using a biased sweeping PFM tip. Subsequent imaging of switched domain patterns was performed. The stabilization of the written domain was investigated by inverse biased tip scanning. The results indicate that these films are suitable for submicron scale domain writing, and the resulted domain are affected by the condition of crystalline boundary. The written domain is superficial and can be easily erased by inverse tip-applied electric field.