Metal Gate Effects on a 32 nm Metal Gate Resistor

摘要

At the 32 nm technology node, the change from a P+ polysilicon / SiON gate stack to a P+ A-silicon/metal gate/high-K dielectric will have a significant impact on RF passives, especially the MOSCAPs and gate resistors. The low sheet resistance value of the metal gate resistor will cause its size to increase. As shown in Figs. 7, 8, and 9, the metal gate resistor TC ranges from positive values for resistors with longer length and narrower width to negative values for resistors with shorter length and wider width. This strong temperature performance dependence on L&W may limit the L&W ranges of analog metal gate resistor designs.