A Si-DOPED GaAs/AlGaAs SOLAR CELLON (311)A GaAs SUBSTRATE

摘要

We demonstrated the fabrication of Si-doped p-n junction GaAs/AlGaAs (with varying Al content 0.0-0.3) solar cells on (311)A n-GaAs substrates by molecular beam epitaxy. By the amphoteric properties of Si as a dopant in high-index (311) A GaAs substrate, a device with a vertical p-n junction was obtained. To achieve p-type conduction in (Al)GaAs layers, low V/III ratio were required, whereas high V/III ratio leads to n-type conduction. In this work, the Si-doped conduction type was controlled by changing the III-group deposition rate with a constant of Aso pressure.