Study on the novel double-gate tunneling field-effect transistor with InAs source

摘要

Tunneling field effect transistor (TFET) suffers from low drive current along with severe ambipolar behavior. To resolve these bottleneck issues, a novel double gate tunneling field effect transistor with InAs source (InAsDGTFET) is proposed in this paper. By optimizing the proposed device parameters, drive current can be achieved as high as 1.09×10~(-3)A/μm, and I_(ON)/I_(OFF) ratio is 10~(10) that far more than 10~6. Additionally, the sub-threshold swing (SS) of 30mV/decade is gained which breakthrough the limitation of 60mV/decade that MOSFET suffers. Also, variations in source, drain and channel doping concentrations, gate work function and silicon film thickness are investigated. It is found that the device threshold voltage(V_(th)), SS, ambipolar behavior issue and drive current is more sensitive to these parameters variation.