Single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on flexible polyimide substrates

摘要

We fabricated the single-crystalline Ge (sc-Ge) p-channel thin-film transistors (TFTs) with Schottky-barrier source/drain (S/D) on flexible polyimide substrates by a simplified low-temperature process (≤250°C), which preserves the high mobility Ge channel. Adhesive wafer bonding and Smart-Cut techniques were utilized to transfer the sc-Ge thin film onto polyimide substrates. The device has a linear hole mobility of ～170cm~2V~(-1)s~(-1), saturation hole mobility of ～120cm~2V~(-1)s~(-1), and I_(on) of ～1.6μA/μm at V_d=-1.5V for the channel width/length=280/15μm.