首页> 外国专利> Reference voltage generation circuit for e.g. analog to digital converter, has current sources respectively connecting gate and drain of corresponding P-channel metal oxide semiconductor transistor to voltage application terminal and ground

Reference voltage generation circuit for e.g. analog to digital converter, has current sources respectively connecting gate and drain of corresponding P-channel metal oxide semiconductor transistor to voltage application terminal and ground

机译:参考电压产生电路,例如模数转换器,具有分别将相应的P沟道金属氧化物半导体晶体管的栅极和漏极连接到电压施加端子和地的电流源

摘要

The circuit has a current source (31) that connects a gate of a P-channel metal oxide semiconductor (MOS) transistor (MP0) to a voltage application terminal (2). A current source (22) connects a drain of a P-channel MOS transistor (MP1) to the ground (3). The transistor (MP0) connects the source of the transistor (MP1) to the terminal and has its gate connected to drain of the transistor (MP1) by an N-channel MOS transistor (MN0).
机译:该电路具有电流源(31),该电流源将P沟道金属氧化物半导体(MOS)晶体管(MP0)的栅极连接到电压施加端子(2)。电流源(22)将P沟道MOS晶体管(MP1)的漏极连接到地(3)。晶体管(MP0)将晶体管(MP1)的源极连接到端子,并且其栅极通过N沟道MOS晶体管(MN0)连接到晶体管(MP1)的漏极。

著录项

  • 公开/公告号FR2881236A1

    专利类型

  • 公开/公告日2006-07-28

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS SA SOCIETE ANONYME;

    申请/专利号FR20050050227

  • 发明设计人 SABUT MARC;MORO JEAN LUC;

    申请日2005-01-26

  • 分类号G05F3/26;

  • 国家 FR

  • 入库时间 2022-08-21 21:17:16

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号