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Investigation of Mask Defect Density in Full-Field EUV Lithography - (PPT)

机译:全场EUV光刻掩模缺陷密度调查 - (PPT)

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Combination of the 3 inspection techniques + wafer review of prior detections is our current best technique to qualify defect density. Defect density of our champion reticle is still (>)13x higher than the "target" of ~0.04 defects/cm~2 And detecting defects by printing is too late. ML-defect repair - Is possible by absorber pattern compensation, but has a limited capability window. Its need must be avoided. Most likely will need to be iterative. Need for AIMS review.
机译:3检验技术+晶圆回顾的先前检测是我们目前的资格缺陷密度的最佳技术。我们的冠军掩模版的缺陷密度仍然(>)13x高于〜0.04缺陷/ cm〜2的“目标”,并通过印刷检测缺陷为时已晚。 ML缺陷修复 - 通过吸收器模式补偿,但具有有限的能力窗口。必须避免它的需要。最有可能需要迭代。需求审查。

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