Full field exposure tool, EUV1, is ready for process. 28nm 1:1 Lines & Spaces was obtained across the dynamic exposure. We tried to evaluate process TEG, Process development on PL-TEG is progressing; 35nm device verify on BEP-TEG. EUV1 has highly potential to resolve 25nm 1:1 L&S using conventional illumination, 20nm using dipole illumination. We started to evaluate 2xTEG lithographic performance. Next step is electrical measurement with fabricated pattern. We can see beyond 22nm...
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