22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool

摘要

Microfield exposure tools continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. Here we present an update on the SEMATECH Berkeley 0.3-NA microfield exposure tool and summarize the latest test results from high-resolution line-space printing. Printing down to 20-nm is presented with large process latitude at 22-nm half-pitch lines. Also presented are line-edge roughness results along with a discussion of the importance of mask contributors to line-edge roughness measured in resist. Finally we briefly describe an upgrade to the tool that will enable EUV resist development at the 16-nm half-pitch node and beyond. (This paper was presented in MNE 2008 conference).