Advanced resist testing using the SEMATECH Berkeley extreme ultraviolet microfield exposure tool

摘要

Recent upgrades made to the SEMATECH Berkeley microfield exposure tool are summarized and some of the latest resist characterization results are presented. Tool illumination uniformity covering the full 200 × 600 μm~2 wafer-side field of view is demonstrated and intrawafer focus control of 1.8 nm is shown. Printing results demonstrate chemically amplified resist resolution of 28 nm dense and 22.7 nm semi-isolated. Moreover, contact printing results show that shot noise is not a dominant issue in current 35 nm contact printing performance.