Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22nm Technology Nodes Circuit Applications

摘要

In this work we explore several doping schemes for aggressively scaled multi-gate field-effect transistor devices with the conduction channels wrapped around silicon fins (FinFETs) (H_(Fin) ～37 nm, W_(Fin) ≥10nm, L_g≥30 nm), using conventional ion implantation (I/I), and suitable for both logic and dense circuit applications. We demonstrate that low-energy and: 1) low-tilt, double-sided extension(-less) I/I, or 2) high-tilt, single-sided extension I/I schemes can enable pitch scaling without resist shadowing effects, with no penalty in device performance and yielding higher six transistors-static random access memory (6T-SRAM) static noise margin (SNM) values. Key advantages of the extension-less approach are: reduced cost and cycle time with 2 less critical I/I photos, enabling better quality, defect-free growth of Si-epitaxial raised source/drain (SEG), and up to 20x lower /_(off). It, however, requires a tight spacer critical dimension (CD) control, a less critical parameter for the single-sided I/I scheme, which also allows wider overlay margins.