Studies on I-V performance enhancements of ZnO thin film transistors by vacuum treatments below 300#x00B0;C

摘要

Bottom gate ZnO-TFTs are fabricated and the devices' characteristics are reported. Before contact patterning, ZnO films were annealed in high vacuum environment under lower temperatures compared with in forming gas treatments. The characteristics of the ZnO-TFTs which have been annealed, especially at 300°C, have significant enhancement compared with those have not been annealed. The on/off current ratio is more than 103 and the off current is less than 2×10−8A at VDS=40V.