首页>
外国专利>
THIN SILICON SINGLE DIFFUSION FIELD EFFECT TRANSISTOR FOR ENHANCED DRIVE PERFORMANCE WITH STRESS FILM LINERS
THIN SILICON SINGLE DIFFUSION FIELD EFFECT TRANSISTOR FOR ENHANCED DRIVE PERFORMANCE WITH STRESS FILM LINERS
展开▼
机译:薄硅单扩散场效应晶体管,通过应力膜衬层增强驱动性能
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a semiconducting device structure including a thin SOI region, wherein the SOI device is formed with an optional single thin diffusion, i.e., offset, spacer and a single diffusion implant. The device silicon thickness is thin enough to permit the diffusion implants to abut the buried insulator but thick enough to form a contacting silicide. Stress layer liner films are used both over nFET and pFET device regions to enhance performance.
展开▼