A More Accurate Potential-Based Drain Current Model for Bulk-MOSFETs

摘要

This paper presents a new and more accurate potential based model for bulk MOSFET compared to the traditional charge-sheet surface potential model. The channel potential of the bulk MOSFET is obtained by solving Poisson equation and an accurate current expression is obtained base on it. Taking Pao-Sah model as a standard, the relative errors of the charge-sheet model may be as large as 4% in the saturation region while that of the present model is less than 1.05%.