Modeling the effect of source/drain junction depth on bulk-MOSFET scaling

摘要

Accurate threshold voltage (V_T) modeling of bulk-MOSFETs is important for device optimization and circuit simulation. Existing V_T models cannot model the impact of source/drain junction depth on V_T rolloff. A new model is proposed that can accurately model bulk-MOSFET V_T including the source/drain junction depth. The model also provides a scale-length that can be used to rapidly predict the minimum channel-length for a given set of technology parameters.