An Analytical Current Model for Lateral Gradual Doping Channel in LDMOS

机译：LDMOS中横向渐进通道的分析电流模型

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An analytical surface potential based current model for lateral gradual doping channel in LDMOS (lateral gradual doping MOSFETs) is developed. The position dependent parameters and build in electric field induced by the gradual doping profile are taken into account in derivation of a surface potential equation. Proper approximations are made in integration of the drift-diffusion current. The model is verified by two-dimensional device simulator MEDICI.

机译：开发了LDMOS（横向逐渐掺杂MOSFET）中横向渐进掺杂通道的基于分析表面电位模型。在表面电位方程的推导下考虑了由逐渐掺杂轮廓引起的电场的位置依赖性参数和构建。在漂移扩散电流集成时进行适当的近似。该模型由二维设备模拟器Medici验证。

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《IEEE International Conference of Electron Devices and Solid-State Circuits》|2009年||共4页
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Wenniu Xie; Bin Li;
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中图分类 TN4-53;
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2. Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. ll. Continuous drain current model from subthreshold to inversion region [J] . Edward Namkyu Cho, Yong Hyeon Shin, Ilgu Yun Journal of Applied Physics . 2013,第21期

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4. An Analytical Current Model for Lateral Gradual Doping Channel in LDMOS [C] . Wenniu Xie, Bin Li IEEE International Conference of Electron Devices and Solid-State Circuits . 2009

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An Analytical Current Model for Lateral Gradual Doping Channel in LDMOS

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