Classical Gradual-Channel Modeling of Graphene Field-Effect Transistors (FETs)

摘要

This technical report describes initial efforts, as part of the new Strategic Technology Initiative (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices. It is argued that the underlying physics that differentiates these devices from their normal semiconductor-based counterparts is most clearly revealed by non- computer-intensive descriptions that allow the designer to compare their behavior with that of their well-studied semiconductor counterparts. Because it admits a reasonable description of both the lateral and vertical field and transport functionality of the FET structure, the gradual-channel approximation is key to this approach. The availability of closed-form solutions to the problem within this approach, in turn, allows small-signal and microwave parameters to be calculated quickly and transparently.