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Development of wafer thinning and dicing technology for thin wafer

机译:薄晶圆晶圆减薄和切割技术的开发

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摘要

Various stress relief and dicing methods are evaluated for 10 to 30μm wafer thickness. DP (Dry Polish) and CMG (Chemical Mechanical Grinding) are the best solution for productivity and quality in wafer thinning. Highest die strength is achieved for the blade dicing and DBG (Dicing Before Grinding) due to the decreased backside chipping in thin wafer. As for DBG, it is necessary to improve the resin adhesive strength of H-WSS (Hard Wafer Support System).
机译:评估各种应力浮雕和切割方法10至30μm的晶片厚度。 DP(干抛光)和CMG(化学机械磨削)是晶片变薄中生产率和质量的最佳解决方案。由于薄晶片中的后侧碎片降低,对于叶片切割和DBG(在研磨前进行DBG),实现了最高管芯强度。至于DBG,有必要改善H-WSS的树脂粘合强度(硬晶片支撑系统)。

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