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Development of wafer thinning and dicing technology for thin wafer

机译:薄晶圆晶圆减薄和划片技术的发展

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摘要

Various stress relief and dicing methods are evaluated for 10 to 30µm wafer thickness. DP(Dry Polish) and CMG (Chemical Mechanical Grinding) are the best solution for productivity and quality in wafer thinning. Highest die strength is achieved for the blade dicing and DBG (Dicing Before Grinding) due to the decreased backside chipping in thin wafer. As for DBG, it is necessary to improve the resin adhesive strength of H-WSS (Hard Wafer Support System).
机译:针对10至30μm的晶片厚度,评估了各种应力消除和切割方法。 DP(干磨)和CMG(化学机械研磨)是提高晶圆薄化生产率和质量的最佳解决方案。由于减少了薄晶圆的背面碎裂,刀片切割和DBG(磨削前切割)可实现最高的芯片强度。对于DBG,有必要提高H-WSS(硬晶片支撑系统)的树脂粘合强度。

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