A Surface Field Based Model for Ultra Thin Body Undoped Symmetric DG MOSFETs

摘要

In this paper, we present a fast yet accurate semi-analytical model for the I-V and C-V characteristics of nanoscale undoped symmetric double gate (DG) MOSFETs. The model employs a simple parabolic potential approximation for the body potential in the coordinate normal to the interfaces in the all regions of operation. To include quantum effects in the model, the Schrodinger's equation is analytically solved in one dimensional quantum well. The calculated surface electric field is used in a compact classical model of the symmetric DG MOSFET as a core model. Some quantum effects which include the threshold voltage shift and effective oxide thickness increment are applied through some modifications to the core model. To assess the accuracy of the proposed model, the results of the model are compared to those of the numerical simulations. The comparison reveals the high accuracy of the proposed model.