首页> 外文会议>International Conference on Surface Effects and Contact Mechanics >Generating behavior of whiskers on Pb free Sn plating and its control
【24h】

Generating behavior of whiskers on Pb free Sn plating and its control

机译:PB免费SN电镀晶须的生成行为及其控制

获取原文

摘要

Until now, electronics materials have mainly been manufactured from Sn-Pb alloy plating. However, there is a problem in that Pb pollutes the environment. Therefore, Sn-Pb alloys are principally prohibited for use in electronic components by RoHS instruction. Therefore, the development of an alternative material to Pb is required from now on. However, whisker generation has become a problem when an alternative material to Sn-Pb alloy is used. In this study, various investigations are conducted employing Sn-Cu, Sn-Bi and Sn-Pb alloys on the basis of microstructure control for the best plating material to prevent whisker generation when used as an alternative material to Pb. As a result, the difference in crystal grain morphology was clarified between these three kinds of plating materials through conducting FIB processing and detailed SIM observation. Therefore, the residual and contact stresses generated by the process of putting the FPC into a connector cannot be easily be relieved in the case of Sn-Cu plating film, the microstructure of which has fine columnar grains. Increasing the Bi contents improved whisker generation and growth characteristics. Whisker generation and growth were suppressed in the case of applying a Sn-Bi alloy whose Bi content was larger than 2wt%. In this case, grain size was also increased with the increase of Bi content. Therefore, material selection and control of grain morphology are extremely important for suppressing whisker generation and growth.
机译:到目前为止,电子材料主要由Sn-Pb合金电镀制造。但是,PB污染环境中存在问题。因此,SN-PB合金主要禁止通过RoHS指令用于电子元件。因此,从现在开始需要开发替代材料到PB。然而,当使用SN-PB合金的替代材料时,晶须产生已经存在问题。在该研究中,在用于最佳电镀材料的微观结构控制的基础上,进行各种研究,以防止当用作Pb时的替代材料时防止晶须产生。结果,通过进行FIB处理和详细的SIM观察,在这三种电镀材料之间澄清了晶粒形态的差异。因此,在Sn-Cu电镀膜的情况下,在Sn-Cu电镀膜的情况下,通过将FPC放入连接器的过程产生的残留和接触应力,其微观结构具有精细的柱状晶粒。增加BI内容改善了晶须生成和生长特征。在应用Bi-Bi合金的情况下,晶须产生和生长被抑制了Bi含量大于2wt%的情况。在这种情况下,随着BI含量的增加,晶粒尺寸也增加。因此,晶粒形态的材料选择和控制对于抑制晶须生成和生长非常重要。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号