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Generating behavior of whiskers on Pb free Sn plating and its control

机译:无铅锡镀晶须的产生行为及其控制

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Until now, electronics materials have mainly been manufactured from Sn-Pb alloy plating. However, there is a problem in that Pb pollutes the environment. Therefore, Sn-Pb alloys are principally prohibited for use in electronic components by RoHS instruction. Therefore, the development of an alternative material to Pb is required from now on. However, whisker generation has become a problem when an alternative material to Sn-Pb alloy is used. In this study, various investigations are conducted employing Sn-Cu, Sn-Bi and Sn-Pb alloys on the basis of microstructure control for the best plating material to prevent whisker generation when used as an alternative material to Pb. As a result, the difference in crystal grain morphology was clarified between these three kinds of plating materials through conducting FIB processing and detailed SIM observation. Therefore, the residual and contact stresses generated by the process of putting the FPC into a connector cannot be easily be relieved in the case of Sn-Cu plating film, the microstructure of which has fine columnar grains. Increasing the Bi contents improved whisker generation and growth characteristics. Whisker generation and growth were suppressed in the case of applying a Sn-Bi alloy whose Bi content was larger than 2wt%. In this case, grain size was also increased with the increase of Bi content. Therefore, material selection and control of grain morphology are extremely important for suppressing whisker generation and growth.
机译:到目前为止,电子材料主要由Sn-Pb合金镀层制造。但是,存在铅污染环境的问题。因此,RoHS指令主要禁止在电子部件中使用Sn-Pb合金。因此,从现在开始需要开发替代Pb的材料。然而,当使用Sn-Pb合金的替代材料时,晶须的产生已经成为问题。在这项研究中,基于微观结构的控制,采用Sn-Cu,Sn-Bi和Sn-Pb合金进行了各种研究,以寻找最佳的镀层材料,以防止晶须生成以替代Pb时产生晶须。结果,通过进行FIB处理和详细的SIM观察,澄清了这三种镀覆材料之间的晶粒形态差异。因此,在其微结构具有细的柱状晶粒的Sn-Cu镀膜的情况下,不能容易地消除将FPC放入连接器的过程中产生的残余应力和接触应力。 Bi含量的增加改善了晶须的产生和生长特性。在使用Bi含量大于2wt%的Sn-Bi合金的情况下,抑制了晶须的产生和生长。在这种情况下,随着Bi含量的增加,晶粒尺寸也增加。因此,材料的选择和晶粒形态的控制对于抑制晶须的产生和生长极为重要。

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