We describe measurements on a silicon single electron transistor (SET) carried out using a custom cryogenic CMOS measurement circuit (LTCMOS) in close proximity to the device. Quantum mechanical states in the SET were mapped by continuous microwave spectroscopy. The real time evolution of a particularly long lived quantum mechanical state was observed in a single shot measurement, made possible by the much faster measurement rate (50kHz bandwidth). This technique is intended to be applied to the measurement of coherent states in a charge qubit device made of a silicon double dot.
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