Fabrication of Silicon Single-electron Transistors Using Secondary Electron Proximity Effect and Silicon Oxidation in Electronic Drawing

摘要

The present invention relates to a method of manufacturing a single electron transistor using imaging and silicon oxidation using a proximity effect of a secondary electron of an electron beam. The method includes a first step of coating an electron beam resist on a silicon substrate and a step of forming a gate, a source, Electron beam imaging is performed with a space between the source and the quantum dots and between the quantum dots and the drain so as to form the source and the quantum dots by the proximity effect of the secondary electrons of the electron beam and the line widths A third step of etching the silicon using the oxide film as a mask; and performing a silicon thermal oxidation to form the thin, waist-shaped Electrically insulated tunnels to source and quantum dots and quantum dots And a fourth step of forming a ring junction between the tunnel junction and the tunnel junction. The most important tunnel junction in the structure of the single-electron transistor can be fabricated by using the proximity effect of the secondary electron of the electron beam and the silicon oxidation process.