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Integrated silicon qubit platform with single-spin addressability exchange control and single-shot singlet-triplet readout

机译:集成式硅量子比特平台具有单轴寻址能力交换控制和单脉冲单重态-三重态读数

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摘要

Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet–triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.
机译:硅量子点自旋量子位因其与常规CMOS制造的兼容性以及使用 28 Si富集材料可获得的长相干时间而为大规模量子计算提供了一个有希望的平台。然而,可伸缩的纠错量子处理器将需要并行控制许多量子位,同时在组成量子位上执行错误检测。自旋共振技术是实现平行两轴控制的便捷途径,而保利自旋封锁技术可用于实现局部奇偶校验测量以进行错误检测。尽管如此,到目前为止,硅量子比特的实现方式还是集中在单轴谐振控制上,或者着重于在两轴单重态-三重态基础上通过电压脉冲失谐进行的控制和测量,但并非同时进行。在这里,我们展示了一个集成的设备平台,该平台结合了一个硅金属氧化物半导体双量子点,该单量子点能够通过电子自旋共振进行单轴寻址和控制,并结合了基于三重态的高保真自旋读出。

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