Memristor Fabrication and Characterization; An Adaptive Coded ApertureImaging Sensing Opportunity

摘要

The memristor, experimentally verified for the first time in 2008, is one of four fundamental passive circuit elements (the others being resistors, capacitors, and inductors). Development and characterization of memristor devices and the design of novel computing architectures based on these devices can potentially provide significant advances in intelligence processing systems for a variety of applications including image processing, robotics, and machine learning. In particular, adaptive coded aperture (diffraction) sensing, an emerging technology enabling real-time, wide-area IR/visible sensing and imaging, could benefit from new high performance biologically inspired image processing architectures based on memristors. In this paper, we present results from the fabrication and characterization of memristor devices utilizing titanium oxide dielectric layers in a parallel plate conuration. Two versions of memristor devices have been fabricated at the University of Dayton and the Air Force Research Laboratory utilizing varying thicknesses of the TiO_2 dielectric layers. Our results show that the devices do exhibit the characteristic hysteresis loop in their I-V plots.