MEMRISTOR FABRICATION METHOD, MEMRISTOR AND RESISTIVE RANDOM ACCESS MEMORY RRAM

摘要

Provided in embodiments of the present application are a memristor fabrication method, a memristor, and a resistive random access memory (RRAM), the memristor fabrication method comprising: depositing a lower electrode of a memristor; preparing a resistance layer of the memristor along a cross section of the deposition direction of the lower electrode of the memristor; preparing an upper electrode of the memristor on the resistance layer of the memristor.