Effects of Wavefunction Modulation on Electron Transport in Ultrathin-Body DG MOSFETs

摘要

Current-voltage characteristics of ultrathin-body double-gate MOSFETs are calculated within non-equilibrium Green's function formalism including g-type, f-type, and acoustic phonon scattering. By comparing results under asymmetric and symmetric bias conditions, wavefunction modulation effects on transport characteristics are investigated. On-current reduction ratio under symmetric bias condition becomes significantly smaller than that under asymmetric bias condition when silicon-body thickness t > 3 nm.