Study on the Optimized Design of Nanowire Tunneling Transistors Including Quantum Effects

摘要

To reduce shortchannel effects in modern nanoscale MOS devices alternative device concepts like the tunneling field effect transistor have been suggested. Since the complete current is sustained by tunneling processes, these devices obey different design rules than MOSFETs. Similarly, the use of multigate structures is an interesting approach to cope with undesired shortchannel effects. A very promising idea is the combination of these two concepts. Using physical device simulation, we investigate the functionality and performance of such nanowire tunneling transistors. Special attention is focussed on the possibility to improve the device performance by considering alternative materials for the gate-stack and the source region.