A Surface Potential Model for Bulk MOSFET which Accurately Reflects Channel Doping Profile Expelling Fitting Parameters

摘要

A surface potential model for bulk MOSFET which accurately reflects channel doping profile is proposed. Only physical parameters such as device structures and doping profiles are used in the proposed model. For the vertical direction to channel, the model consistently integrates both surface potential and arbitral channel doping profiles in Poisson equation by using HiSIM2 [1] framework. For channel direction, the model improves Pang's quasi-2D Gaussian box model [2] by taking the effect of source/drain junction depth into account. To accurately reflect the effect of the doping profile, drain current is evaluated by numerical integration using the calculated surface potential. The dependence of both short channel effect (SCE) and the reverse short channel effect (RSCE) on Vds, Vbs, channel length, junction depth and channel doping profiles, are expressed accurately without using any fitting parameters.