Study of Stress Effect on Replacement Gate Technology with Compressive Stress Liner and eSiGe for pFETs

摘要

The stress effect at the channel region of pFETs with compressive stress liner (c-SL) and eSiGe using replacement gate technology is firstly investigated in detail based on the combination of UV-Raman spectroscopy and 3D stress simulation. The gate length effect for the channel stress is confirmed by measurement and simulation. Moreover, the Ion dependence on the channel width is also investigated. It is found that the lateral stress along the channel is enhanced at the edge beside STI, resulting in high Ion at narrow gate width region.