Testing Methodology of Embedded DRAMs

摘要

The embedded-DRAM testing mixes up the techniques used for DRAM testing and SRAM testing since an embedded-DRAM core combines DRAM cells with an SRAM interface (the so-called 1T-SRAM architecture). In this paper, we first present our test algorithm for embedded-DRAM testing. A theoretical analysis to the leakage mechanisms of a switch transistor is also provided, based on that we can test the embedded-DRAM at a higher temperature to reduce the total test time and maintain the same retention-fault coverage. The experimental results are collected based on 1-lot wafers with an 16Mb embedded DRAM core.