The Effects of Post-annealing on Pulse Laser Deposition ofZr0 8Sn0 2TiO_4Thin Film on Si(100)

摘要

We demonstrate the pulse laser deposition (PLD) of zirconium tin titanium oxide (Zr0.8,Sn0.2)TiO4 (ZST) thin film onp-type Si (100)substrate by KrF excimer laser at room temperature, and the study of the effects of post-annealing to theoptical and dielectric properties of the deposited ZST thin films. Deposition rate of ZST thin film at 0.3 A/pulse has beenachieved with laser fluences of 1500 mJ/cm~2. Raman spectroscopy, X-ray diffraction (XRD), and scanning electronmicroscopy (SEM) are used to study the effect of the crystalline properties of the deposited films on process parameters;such as laser fluence and annealing temperature. In addition, UV-Vis spectroscopy is used to characterize the optical properties of the deposited ZST films.