GaN-Si-MEMS structure fabricated from nano-column GaN quantum well crystal grown on Si substrate

摘要

Nanocolumn-crystallized InGaN/GaN quantum well crystals were deposited on Si (111) substrate. Photoluminescence measurement demonstrated a wide emission wavelength from About 400 nm to 700 nm. We propose a new light source de- ice combined with Micro-Electro-Mechanical Systems MEMS). The proposed device is monolithically composed of e GaN light source structures and Si MEMS. The direction of the light beam emitted from an array of the light source can be changed by a MEMS beam steering mechanism. A micro-stage with comb actuators was fabricated from the Si sub-strate. The InGaN/GaN quantum well film is patterned on the micro-stage. Basic researches on the growth of GaN crystals on Si substrate were also carried out.