机译:由在Si衬底上生长的纳米柱GaN量子阱晶体制成的GaN-Si-MEMS结构
Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan;
Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan;
Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan;
Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan;
quantum wells; Ⅲ-Ⅴ semiconductors; quantum wells; Ⅲ-Ⅴ semiconductors; molecular, atomic, ion, and chemical beam epitaxy; micro- and nano-electromechanical systems (MEMS/NEMS) and devices;
机译:金属有机化学气相沉积Au + Ga合金种子法在Si(111)衬底上生长的自组装GaN纳米柱
机译:利用Au + Ga合金的MOCVD法在Si(111)衬底上生长的GaN纳米柱的生长和表征
机译:洞察原子和纳米级铟分布对在m平面独立GaN衬底上生长的InGaN / GaN量子阱结构的光学性能的影响
机译:GaN-Si-MEMS结构由纳米柱GaN量子阱晶体生长在Si衬底上
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:HVPE生长的GaN晶体中的应力对MOCVD-GaN / 6H-SiC衬底的影响
机译:洞察原子和纳米级铟分布对在M平面独立GaN基材上生长的Ingan / GaN量子井结构的光学性质的影响