In-Line Stress/Contamination Metrology for Advanced Semiconductor Device using micro Raman and Photoluminescence Measurements

摘要

As silicon complementary metal-oxide-semiconductor (CMOS) devices are continuously scaled, and approach 10 nm, 1) the industry is facing difficult technical challenges, not only in process development, but also in quality control and/or device reliability. Occasionally, in volume device manufacturing, a large number of particles may be generated on cleaned Si wafers. Non-contact, optical characterization methods were proposed as practical in-line metrology for advanced semiconductor device using micro Raman and photoluminescence measurements.