Surface passivation has become the key issues for mass production of crystalline silicon solar cells, and it is the surface passivation that is the most important mean to improve the crystalline silicon solar cells efficiency. In this paper, the mechanisms and methods of surface passivation of thin film for CZ silicon wafers were briefly introduced and investigated by titanium dioxide and thermal oxides, which were deposited by thermal oxidation and spraying using N_2 and tetraisopropyl titanate as precursors. The minority carrier lifetime of samples was measured by Quasi-Steady-State Photoconductance Decay (QSSPCD). On the base of measured results, we can get a conclusion that thermal oxidation is excellent for surface passivation, and there is no passivation on the surface of CZ silicon for TiO_2 thin film.
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