SILICON WAFER ON WHICH Ni AND Ni ALLOY FILM IS FORMED, FORMING METHOD OF Ni AND Ni ALLOY FILM ON Si WAFER, SURFACE ROUGHENING PROCESSING LIQUID TO SURFACE OF Si WAFER IN FORMING Ni AND Ni ALLOY FILM, AND SURFACE ROUGHENING PROCESSING METHOD OF THE SURFACE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming Ni film having excellent adhesion on an Si wafer with electroless Ni plating without coating metal element having a catalytic function and without performing excessive heat treatment.;SOLUTION: There is provided a method of forming a Ni thin film 2 having a thickness of 0.05 to 0.5 μm on an Si wafer 1 and forming a thick film 3 of Ni or Ni alloy having a thickness of 3 to 7 μm on the thin film, in which SiO₂ that exists on the Si wafer is removed in advance by hydrofluoric acid aqueous solution or buffered hydrofluoric acid, then the wafer is immersed into aqueous solution containing strong alkali, ammonium fluoride and Cu to perform roughening processing by hydrophilic treatment and etching. In forming the Ni thin film 2, the wafer is immersed into aqueous solution containing Ni salt, complexing agent, ammonium fluoride and pH buffering agent, and Ni ion in the aqueous solution and Si are substituted. The thick film 3 of Ni or Ni alloy is formed by using electroless Ni plating liquid. Heat treatment is performed to the films in the atmospheric air at 150 to 200°C for 15 to 60 minutes.;COPYRIGHT: (C)2014,JPO&INPIT