Analytical Study of DC Characteristics of p-Si/脽-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode

机译：P-Si /Ⅴ-Fesi 2 / N-Si双异质结构发光二极管的DC特性分析研究

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The analytical method is developed to calculate the equilibrium and forward-bias conditions of p-Si/beta-FeSi2/n-Si DH LED. The Poisson''s equation is solved to investigate the equilibrium electric field and free carriers distributions. Diffusion and ther

机译：开发了分析方法以计算P-Si / Beta-Fesi2 / n-Si DH LED的平衡和正向偏置条件。泊松的等式得到解决，以研究均衡电场和自由载体分布。扩散和它

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来源
《IEEE Conference on ELectron Devices and Solid-State Circuits》|2007年||共4页
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作者
Huang J.S.; Lee K.W.; Wang C.B.; Huang Y.S.; Shiu S.F.; Liu Y.J.;
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原文格式 PDF
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中图分类 TN43-53;
关键词
Poisson equation; elemental semiconductors; light emitting diodes; silicon; thermionic emission; DH LED DC characteristics; I-V characteristics calculation; Poisson equation; Si-FeSilt; subgt; 2lt; /subgt; -Si; diffusion mechanism; double-heterostructure light-emitting diode;

机译：泊松方程;元素半导体;发光二极管;硅;热离子发射;DH LED直流特性;IV特征计算;泊松方程;Si-Fesi＆lt;2＆gt;-si;扩散机构;双异性结构发光二极管;

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1. Photoluminescence decay time and electroluminescence of p-Si/β-FeSi_2 particles-Si and p-Si/β-FeSi_2 film-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy [J] . T. Suemasu, Y. Ugajin, S. Murase, Journal of Applied Physics . 2007,第12期

机译：通过分子束外延生长的p-Si /β-FeSi_2颗粒/ n-Si和p-Si /β-FeSi_2薄膜/ n-Si双异质结构发光二极管的光致发光衰减时间和电致发光
2. p-Si/β-FeSi_2-Si double-heterostructure light-emitting diodes achieving 1.6 μm electroluminescence of 0.4 mW at room temperature [J] . Mitsushi Suzuno, Tomoaki Koizumi, Takashi Suemasu Applied Physicsletters . 2009,第21期

机译：在室温下实现0.4 mW的1.6μm电致发光的p-Si /β-FeSi_2/ n-Si双异质结构发光二极管
3. Fabrication of p-Si/β-FeSi_2-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy [J] . Motoki TAKAUJI, Cheng LI, Takashi SUEMASU, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：分子束外延法制备p-Si /β-FeSi_2/ n-Si双异质结构发光二极管
4. Analytical Study of DC Characteristics of p-Si/脽-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode [C] . Huang J.S., Lee K.W., Wang C.B., IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

机译：P-Si /Ⅴ-Fesi 2 / N-Si双异质结构发光二极管的DC特性分析研究
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7. Photoluminescence decay time and electroluminescence of p-Si/beta-FeSi2 particles/n-Si and p-Si/beta-FeSi2 film/n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy [O] . Suemasu T., Ugajin Y., Murase S., 2007

机译：通过分子束外延生长的p-Si /β-FeSi2颗粒/ n-Si和p-Si /β-FeSi2膜/ n-Si双异质结构发光二极管的光致发光衰减时间和电致发光

Analytical Study of DC Characteristics of p-Si/脽-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode

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