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HIGH COEFFICIENT OF PERFORMANCE QUANTUM WELL THERMOELECTRIC NANO COOLER

机译:高性能量子井热电纳米冷却器

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Nanotechnology quantum well thermoelectric materials have been developed that have high Figures of Merit and that can attain very high coefficients of performance (COP) to satisfy the requirements for cooling room temperature detectors. Hi-Z Technology, Inc. (Hi-Z) has developed Si/SiGe solid state quantum well (QW) thermoelectric (TE) materials that have demonstrated a Seebeck coefficient and thermoelectric properties that provide >4X higher conversion efficiencies than the current bulk TE materials. With the new Si/SiGe QW materials, cooling systems can be designed that are much smaller, quieter, lighter weight, and that have much reduced power requirements than current TE materials or presently used vapor-compression systems. On-going development for these new QW TE materials has demonstrated high-efficiency TE materials for power generation applications ranging from providing power for wireless sensors to converting waste heat from diesel engine exhaust directly to electricity and thus reducing the load on the alternator and reducing fuel consumption. Now, cooling devices with a high coefficient of performance (COP) are feasible and are being designed for room temperature detector cooling applications. Multi-layer nanocomposite QW films (each 10 nm thick) were fabricated to demonstrate that Si/SiGe QW materials can be deposited on a low thermal conductivity substrate and provide at least the desired COP over the required temperature range of 250K to 350K in a single-stage nano cooler. These QW thermoelectric materials can also be implemented into commercial equipment in the air conditioning and refrigeration applications, thus eliminating fluids, ozone-impacting refrigerants and compressors. Thermoelectric properties of QW thin-film materials have been measured at Hi-Z, several universities and national labs. The conversion efficiency of QW materials has been measured at Hi-Z in two different test couples and in a two-couple device, hi all cases, good agreement was obtained between the measurements and prior analytical predictions.Cooling performance was measured in a test with one QW TE element and good agreement was obtained between measurements and analytical predictions. TE properties of the Si/SiGe QW material used in the analysis and design of the subject TE nano cooler were recently independently verified at University of California San Diego (UCSD) and the U.S. National Institute of Standards and Technology (NIST). This paper deals with the analysis of a high COP QW TE single-stage nano cooler for room temperature detectors and with the improved TE properties obtained with the QW thin-film materials resulting in such high COP designs.
机译:已经开发了纳米技术量子井热电材料,其具有高附图,可以获得非常高的性能系数(COP),以满足冷却室温探测器的要求。 Hi-Z技术,Inc。(HI-Z)开发了Si / SiGe固态量子阱(QW)热电(TE)材料,该热电(TE)材料已经证明了Seebeck系数和热电性能,其提供了比当前散装TE更高的转换效率材料。通过新的Si / SiGe QW材料,可以设计冷却系统,这些系统更小,更安静,更轻,并且功率要求远远低于当前TE材料或目前使用的蒸汽压缩系统。这些新的QW TE材料的开展开发已经证明了用于发电应用的高效TE材料,从提供无线传感器的电力,从柴油发动机排气转换为电力,从而减少交流发电机上的负荷和减少燃料消耗。现在,具有高性能系数(COP)的冷却装置是可行的并且正在设计用于室温探测器冷却应用。制造多层纳米复合型QW膜(每10nm厚)以证明Si / SiGe QW材料可以在低导热衬底上沉积,并在单个中至少提供所需的COP在250k至350k的所需温度范围内。 - 纳米冷却器。这些QW热电材料也可以在空调和制冷应用中的商业设备中实现,从而消除了液体,抗冲击制冷剂和压缩机。 QW薄膜材料的热电性能已经在Hi-Z,几所大学和国家实验室测量。 QW材料的转换效率在两种不同的测试伴侣中,在两对不同的试验耦合中,在所有情况下,在所有情况下,在测量和先前分析预测之间获得了良好的一致性。在测试中测量了处理性能在测量和分析预测之间获得了一个QW TE元素和良好的一致性。 Si / SiGe QW材料的TE性能用于分析和设计的TE Nano Cooler的分析和设计最近在加州圣地亚哥大学(UCSD)和美国国家标准与技术研究所(NIST)独立验证。本文涉及对室温检测器的高COP QW TE单级纳米冷却器的分析,并利用QW薄膜材料获得的改进的TE性能,导致如此高的COP设计。

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